DocumentCode
3252316
Title
Emission stability and high current performance of diamond-coated Si emitters
Author
Zhirnov, V.V. ; Voronin, A.B. ; Givargizov, E.I. ; Meshcheryakova, A.L.
Author_Institution
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
340
Lastpage
344
Abstract
Silicon field emitters were coated with polycrystalline diamond using hot-filament CVD technique. Maximum emission currents of 300-500 /spl mu/A were achieved from single-tip emitters. Current fluctuations have been found to be between 3 and 16%. Temporal dependence of emission current was studied during 36 h at initial current of 100 /spl mu/A. At the end of the testing 20%-decrease of the current took place. Diamond coated silicon emitters demonstrated favourable emission properties, as compared with uncoated silicon emitters.
Keywords
CVD coatings; current fluctuations; diamond; electron field emission; silicon; 100 to 500 muA; Si-C; current fluctuations; emission stability; hot-filament CVD; polycrystalline diamond coating; silicon field emitter; single-tip emitter; Coatings; Conductivity; Crystallography; Electric breakdown; Flat panel displays; Prototypes; Silicon; Stability; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487062
Filename
487062
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