Novel Silicide-Cladded Uniaxially-Strained Thin-Body SOI CMOS FETs Featuring Floating Body Modulation Induced by Hf-based Gate Dielectric

Author

Ootsuka, F. ; Watanabe, T. ; Nara, Y. ; Mise, N. ; Migita, S. ; Watanabe, M. ; Satake, H. ; Toriumi, A.

Author_Institution

Semicond. Leading Edge Technol., Tsukuba-shi

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

44

Lastpage

45

Abstract

In this paper, the authors propose novel thin-body SOI FETs with NiSi-cladding. NiSi-cladding is fabricated after the formation of the sacrificing Si layer, and hence the Si consumption in SOI layer is minimized. It is found that NiSi cladding provides compressive strain in pFETs, which causes one order of magnitude decrease in pFET´s off-current. In addition to the effect of NiSi-cladding, the influence of HfSiON gate dielectric on the floating-body effect (FBE) in thin-body SOI pFETs is focused upon

Keywords

MOSFET; claddings; dielectric materials; hafnium compounds; nickel compounds; silicon-on-insulator; FBE; Hf-based gate dielectric; HfSiON; NiSi; SOI layer; compressive strain; floating body modulation; floating-body effect; silicide-cladded SOI CMOS FET; silicon layer; thin-body SOI CMOS FET; uniaxially-strained SOI CMOS FET; Capacitive sensors; Dielectrics; Electron emission; Electron traps; FETs; Fabrication; Intrusion detection; Plasma devices; Silicidation; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284425

Filename

4062873