Novel Silicide-Cladded Uniaxially-Strained Thin-Body SOI CMOS FETs Featuring Floating Body Modulation Induced by Hf-based Gate Dielectric

In this paper, the authors propose novel thin-body SOI FETs with NiSi-cladding. NiSi-cladding is fabricated after the formation of the sacrificing Si layer, and hence the Si consumption in SOI layer is minimized. It is found that NiSi cladding provides compressive strain in pFETs, which causes one order of magnitude decrease in pFET´s off-current. In addition to the effect of NiSi-cladding, the influence of HfSiON gate dielectric on the floating-body effect (FBE) in thin-body SOI pFETs is focused upon