Post-RTA Effect on Electrical Characteristics of Nano-scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

Author

Park, Jea-Gun ; Shim, Tae-Hun ; Lee, Gon-Sub ; Cho, Won-Ju ; Ahn, Chang-Geun

Author_Institution

National Nano-SOI Process Lab., Hanyang Univ., Seoul

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

47

Lastpage

48

Abstract

The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical characteristics of both strained Si and conventional SOI n-MOSFETs was investigated. The authors demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributed to the suppression of channel surface roughness owing to post-RTA

Keywords

Ge-Si alloys; MOSFET; rapid thermal annealing; silicon; silicon-on-insulator; surface roughness; SiGe; SiGe-on-insulator w-MOSFET; channel surface roughness; electrical characteristics; enhanced DC characteristics; heat treatment; nanoscale strained silicon growth; post-RTA effect; rapid thermal annealing; Conference proceedings; Electric variables; Germanium silicon alloys; Leakage current; MOSFET circuits; Rapid thermal annealing; Rough surfaces; Silicon germanium; Solids; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284426

Filename

4062874