Title :
Injection and emission currents of formed MIM systems in a wide temperature range
Author :
Khaskelberg, M.B.
Author_Institution :
Tomsk State Pedagogical Inst., Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Conductivity and emission of formed thin film Me-SixNyOz-Me cathodes were studied in the range of temperatures and pressures of 4 K-300 K and 10/sup -8/ torr-10/sup -5/ torr, respectively. The thicknesses of the dielectric film and the top electrode were 40 nm and 10 nm, respectively. The technique for fabricating structures of this type is described in detail elsewhere.
Keywords :
MIM devices; cathodes; electroforming; electron emission; 1E-8 to 1E-5 torr; 4 to 300 K; SiNO; conductivity; dielectric film; emission current; formed MIM system; injection current; thin film cathode; Cathodes; Conducting materials; Conductivity; Dielectric materials; Dielectric thin films; Electrodes; Electron traps; Equations; Temperature distribution; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487065
