Title :
A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver
Author :
Xie, Feng ; Li, Zhiqun ; Wang, Zhigong
Author_Institution :
Inst. of RF & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presents a 12-channel parallel 40 Gb/s laser diode driver (LDD) realized in 0.35 mum SiGe BiCMOS technology. The single channel works at bite rate of 3.318 Gb/s. A "cross couple" capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20 mA modulation current and 2-5 mA bias current.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; modulation; semiconductor lasers; 12-channel parallel; BiCMOS laser diode driver; SiGe; adjacent channel; bit rate 40 Gbit/s; current 5 mA to 20 mA; isolation method; modulation current; parallel amplifier; size 0.35 mum; Bandwidth; BiCMOS integrated circuits; Capacitance; Current measurement; Diode lasers; Driver circuits; Germanium silicon alloys; Isolation technology; Noise cancellation; Silicon germanium;
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
DOI :
10.1109/SOPO.2009.5230181
