DocumentCode
3252458
Title
A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver
Author
Xie, Feng ; Li, Zhiqun ; Wang, Zhigong
Author_Institution
Inst. of RF & OE-ICs, Southeast Univ., Nanjing, China
fYear
2009
fDate
14-16 Aug. 2009
Firstpage
1
Lastpage
4
Abstract
This paper presents a 12-channel parallel 40 Gb/s laser diode driver (LDD) realized in 0.35 mum SiGe BiCMOS technology. The single channel works at bite rate of 3.318 Gb/s. A "cross couple" capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20 mA modulation current and 2-5 mA bias current.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; modulation; semiconductor lasers; 12-channel parallel; BiCMOS laser diode driver; SiGe; adjacent channel; bit rate 40 Gbit/s; current 5 mA to 20 mA; isolation method; modulation current; parallel amplifier; size 0.35 mum; Bandwidth; BiCMOS integrated circuits; Capacitance; Current measurement; Diode lasers; Driver circuits; Germanium silicon alloys; Isolation technology; Noise cancellation; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-4412-0
Type
conf
DOI
10.1109/SOPO.2009.5230181
Filename
5230181
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