Back-Channel, Depletion-Assisted, Gate-Induced Floating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs

Author

Jun, Bongim ; Diestelhorst, Ryan M. ; Liang, Qingqing ; Freeman, Greg ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Technol., Atlanta, GA

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

59

Lastpage

60

Abstract

The authors reported the floating body effects in 90nm partially-depleted, strained-silicon CMOS on SOI devices operating down to cryogenic temperatures. These devices also exhibit immunity to X-ray and proton irradiation without process hardening (Appaswamy et al, 2006) and thus are potentially suitable for space applications. One-to-one comparisons are made to conventional unstrained CMOS on SOI devices from the same 90 nm technology node

Keywords

MOSFET; X-ray effects; cryogenic electronics; nanotechnology; silicon; silicon-on-insulator; 90 nm; SOI MOSFET; SOI devices; Si; X-ray irradiation; back-channel CMOS; cryogenic temperatures; depletion-assisted CMOS; gate-induced floating body effects; nanotechnology; proton irradiation; strained silicon; CMOS process; CMOS technology; Conference proceedings; Cryogenics; Immune system; MOSFETs; Space technology; Temperature; Threshold voltage; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284432

Filename

4062880