Title :
Back-Channel, Depletion-Assisted, Gate-Induced Floating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs
Author :
Jun, Bongim ; Diestelhorst, Ryan M. ; Liang, Qingqing ; Freeman, Greg ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Technol., Atlanta, GA
Abstract :
The authors reported the floating body effects in 90nm partially-depleted, strained-silicon CMOS on SOI devices operating down to cryogenic temperatures. These devices also exhibit immunity to X-ray and proton irradiation without process hardening (Appaswamy et al, 2006) and thus are potentially suitable for space applications. One-to-one comparisons are made to conventional unstrained CMOS on SOI devices from the same 90 nm technology node
Keywords :
MOSFET; X-ray effects; cryogenic electronics; nanotechnology; silicon; silicon-on-insulator; 90 nm; SOI MOSFET; SOI devices; Si; X-ray irradiation; back-channel CMOS; cryogenic temperatures; depletion-assisted CMOS; gate-induced floating body effects; nanotechnology; proton irradiation; strained silicon; CMOS process; CMOS technology; Conference proceedings; Cryogenics; Immune system; MOSFETs; Space technology; Temperature; Threshold voltage; USA Councils;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284432
