DocumentCode
3252517
Title
Reducing Back Channel Threshold Voltage Shifts of Partially Depleted SOI by Si Ion Implantation
Author
Wei, He ; En-xia, Zhang ; Cong, Qian ; Zheng-xuan, Zhang
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
61
Lastpage
62
Abstract
In this paper, Si ion implantation and high temperature anneal have been used to improve the radiation hardness of SIMOX. Analyse of charge trapping in buried oxides and interface traps show that the radiation hardness of NMOS/SOI was greatly improved by Si ion implantation
Keywords
MOSFET; SIMOX; annealing; interface states; ion implantation; radiation hardening (electronics); silicon-on-insulator; NMOS; SIMOX; SOI; Si; buried oxides; charge trapping; high temperature anneal; interface traps; ion implantation; radiation hardness; threshold voltage shifts; Annealing; Conference proceedings; Electron traps; Helium; Ion implantation; Ionizing radiation; MOS devices; Silicon; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284433
Filename
4062881
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