Title :
Reducing Back Channel Threshold Voltage Shifts of Partially Depleted SOI by Si Ion Implantation
Author :
Wei, He ; En-xia, Zhang ; Cong, Qian ; Zheng-xuan, Zhang
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai
Abstract :
In this paper, Si ion implantation and high temperature anneal have been used to improve the radiation hardness of SIMOX. Analyse of charge trapping in buried oxides and interface traps show that the radiation hardness of NMOS/SOI was greatly improved by Si ion implantation
Keywords :
MOSFET; SIMOX; annealing; interface states; ion implantation; radiation hardening (electronics); silicon-on-insulator; NMOS; SIMOX; SOI; Si; buried oxides; charge trapping; high temperature anneal; interface traps; ion implantation; radiation hardness; threshold voltage shifts; Annealing; Conference proceedings; Electron traps; Helium; Ion implantation; Ionizing radiation; MOS devices; Silicon; Temperature; Threshold voltage;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284433
