• DocumentCode
    3252528
  • Title

    Controlled Single-Electron Effects in Multiple-Gate SOI MOSFETs near Room Temperature

  • Author

    Lee, Wei ; Su, Pin ; Chen, Hou-Yu ; Chang, Chang-Yun ; Su, Ke-Wei ; Liu, Sally ; Yang, Fu-Liang

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    In this work, we further demonstrate controlled single electron effects in these multiple-gate SOI MOSFETs near room temperature through a comprehensive investigation on the observed CBO, which can be modulated by gate length (Lg), fin-width (Wfin), gate bias (VGS), drain bias (VDS) and body implant (NB)
  • Keywords
    MOSFET; silicon-on-insulator; single electron transistors; Coulomb blockade oscillations; body implant; controlled single-electron effects; drain bias; fin-width; gate bias; gate length; multiple-gate SOI MOSFET; Conference proceedings; Electrons; Implants; Industrial electronics; MOSFETs; Niobium; Quantum dots; Semiconductor device manufacture; Temperature control; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284434
  • Filename
    4062882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252528