Title :
Optical controlled Auger transistor on a base of the STM tunnel contact with H-terminated n-Si surface
Author :
Bolotov, L.N. ; Makarenko, I.V. ; Shulekin, A.F. ; Titkov, A.N.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Summary form only given. Current-voltage characteristics of the tunnel contact of a STM-tip and an H-terminated n-Si(111) surface have been studied under optical excitation. We have used the abrupt increase of the reverse tunnel current and its strong dependence on the light illumination of the tunnel contact to realise an optical governed point transistor. The observed dependencies of the STM tunnel contact demonstrate new possibilities for using the STM-tip-tunnel separation-semiconductor structure as an optical controlled nanosize Auger-transistor.
Keywords :
Auger effect; elemental semiconductors; hydrogen; phototransistors; scanning tunnelling microscopy; silicon; tunnel transistors; H-terminated n-Si surface; STM tunnel contact; Si:H; current-voltage characteristics; optical controlled Auger transistor; optical excitation; point transistor; reverse tunnel current; semiconductor structure; Conductive films; Electron optics; Optical control; Optical films; Optical modulation; Secondary generated hot electron injection; Space charge; Thyristors; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487071
