Optical controlled Auger transistor on a base of the STM tunnel contact with H-terminated n-Si surface

Author

Bolotov, L.N. ; Makarenko, I.V. ; Shulekin, A.F. ; Titkov, A.N.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

383

Abstract

Summary form only given. Current-voltage characteristics of the tunnel contact of a STM-tip and an H-terminated n-Si(111) surface have been studied under optical excitation. We have used the abrupt increase of the reverse tunnel current and its strong dependence on the light illumination of the tunnel contact to realise an optical governed point transistor. The observed dependencies of the STM tunnel contact demonstrate new possibilities for using the STM-tip-tunnel separation-semiconductor structure as an optical controlled nanosize Auger-transistor.

Keywords

Auger effect; elemental semiconductors; hydrogen; phototransistors; scanning tunnelling microscopy; silicon; tunnel transistors; H-terminated n-Si surface; STM tunnel contact; Si:H; current-voltage characteristics; optical controlled Auger transistor; optical excitation; point transistor; reverse tunnel current; semiconductor structure; Conductive films; Electron optics; Optical control; Optical films; Optical modulation; Secondary generated hot electron injection; Space charge; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487071

Filename

487071