DocumentCode :
3252631
Title :
Low Temperature Analog Operation of Triple-Gate FinFETs with HfO2 Dielectrics and TiN Gate Material
Author :
Pavanello, M.A. ; Martino, J.A. ; Simoen, Eddy ; Rooyackers, R. ; Collaert, N. ; Claeys, C.
Author_Institution :
Centro Universitario da FEI, Sao Bernardo do Campo
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
73
Lastpage :
74
Abstract :
This paper presents, for the first time, the operation of triple-gate FinFETs with HfO2 gate dielectric, TiN gate and undoped body at cryogenic temperatures. Emphasis for the most common analog figures of merit is given as the intrinsic gain (AV) and the unity gain frequency (fT)
Keywords :
MOSFET; dielectric materials; hafnium compounds; titanium compounds; FinFET; HfO2; TiN; cryogenic temperatures; dielectrics material; gate dielectric; Conference proceedings; Dielectric materials; FinFETs; Hafnium oxide; Implants; MOSFETs; Postal services; Read only memory; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284439
Filename :
4062887
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3252631
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