Title :
Double-Gate FET Technology for RF Applications: Device Characteristics and Low Noise Amplifier Design
Author :
Bhatia, Karan ; Kim, Keunwoo ; Chuang, Ching-Te ; Rosenbaum, Elyse ; Plouchart, Jean-Olivier ; Floyd, Brian A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
Abstract :
Previous works have established that double-gate FET (DGFET) technology provides improved digital circuit performance relative to bulk CMOS (Nowak et al., 2004) and (Kim et al., 2005). However, the benefits of DGFET technology for analog/RF circuits have not been thoroughly analyzed. In this work, we use two-dimensional, mixed-mode simulations to compare the performance of low noise amplifier (LNA) circuits built using DGFET and bulk CMOS devices
Keywords :
CMOS integrated circuits; digital circuits; field effect transistors; integrated circuit design; low noise amplifiers; 2D simulations; DGFET devices; analog circuits; bulk CMOS; digital circuit; double-gate FET technology; low noise amplifier design; mixed-mode simulations; radiofrequency circuits; Circuit noise; Double-gate FETs; Impedance matching; Inductors; Low-noise amplifiers; MOS devices; Noise measurement; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284440
