Title :
Mobility behavior in narrow Ω-gateFETs devices
Author :
Ritzenthaler, R. ; Dupre, C. ; Mescot, X. ; Faynot, O. ; Ernst, T. ; Barbé, J.C. ; Jahan, C. ; Brevard, L. ; Andrieu, F. ; Deleonibus, S. ; Cristoloveanu, S.
Author_Institution :
LETI, Grenoble
Abstract :
In this paper, the mobility of Q-gateFETs was studied in order to investigate the properties of the top and lateral conduction channels, as a function of crystal orientation and quality. The effect of the process-induced strain on the mobility was also considered
Keywords :
crystals; field effect transistors; semiconductor device testing; silicon-on-insulator; crystal orientation; crystal quality; mobility Q-gateFET devices; process-induced strain; Capacitive sensors; Conference proceedings; FETs; MOS devices; Parasitic capacitance; Silicon; Strain measurement; Surface resistance; Tensile stress; Transconductance;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284441
