• DocumentCode
    3252702
  • Title

    A Dynamical Power-Management Demonstration Using Four-Terminal Separated-Gate FinFETs

  • Author

    Endo, K. ; Ishikawa, Y. ; Liu, Y.X. ; Matsukawa, T. ; O´uchi, S. ; Ishii, K. ; Masahara, M. ; Tsukada, J. ; Yamauchi, H. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET
  • Keywords
    CMOS integrated circuits; MOSFET; integrated circuit modelling; CMOS inverter; FinFET; power consumption; power-controllable CMOS technology; power-management; CMOS process; CMOS technology; Circuits; Etching; Fabrication; FinFETs; Inverters; MOSFETs; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284443
  • Filename
    4062891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252702