• DocumentCode
    3252714
  • Title

    Speed performances of thin-film lateral SOI PIN photodiodes up to tens of GHz

  • Author

    Afzalian, Aryan ; Flandre, Denis

  • Author_Institution
    Lab. de Microelectronique, Univ. Catholique de Louvain, Louvain-La-Neuve
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    The present paper investigates performances of SOI PIN detectors in function of their intrinsic length, Li. Our original model, fully validated by Atlas 2D numerical simulations and measurements, allows to predict and optimize their speed performances for the target applications
  • Keywords
    numerical analysis; p-i-n photodiodes; semiconductor device models; silicon-on-insulator; Atlas 2D numerical simulations; SOI PIN photodiodes; Si; speed performances; thin film; CMOS technology; Capacitance; Electrons; Equations; Frequency; PIN photodiodes; Predictive models; Semiconductor device modeling; Semiconductor diodes; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284444
  • Filename
    4062892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252714