DocumentCode :
3252714
Title :
Speed performances of thin-film lateral SOI PIN photodiodes up to tens of GHz
Author :
Afzalian, Aryan ; Flandre, Denis
Author_Institution :
Lab. de Microelectronique, Univ. Catholique de Louvain, Louvain-La-Neuve
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
83
Lastpage :
84
Abstract :
The present paper investigates performances of SOI PIN detectors in function of their intrinsic length, Li. Our original model, fully validated by Atlas 2D numerical simulations and measurements, allows to predict and optimize their speed performances for the target applications
Keywords :
numerical analysis; p-i-n photodiodes; semiconductor device models; silicon-on-insulator; Atlas 2D numerical simulations; SOI PIN photodiodes; Si; speed performances; thin film; CMOS technology; Capacitance; Electrons; Equations; Frequency; PIN photodiodes; Predictive models; Semiconductor device modeling; Semiconductor diodes; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284444
Filename :
4062892
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3252714
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