Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

In this work, an original and computationally efficient analytical model for quantization in FD-SG devices is proposed. It accounts for the coupling between the two interfaces, and leads to a proper modeling of energy levels, and consequently of ballistic and quasi ballistic currents. Suitable to model the impact of subband engineering on performances in the quasi ballistic regime of transport, such a model may also be used to extract from experiments the "degree of ballisticity" of real devices. It has been validated by comparison with Poisson Schrodinger (PS) simulations and experiments