DocumentCode
3252779
Title
Insights on Carrier Mobilities and Transport in Contemporary DG FinFETs
Author
Chowdhury, M.M. ; Trivedi, V.P. ; Fossum, J.G. ; Mathew, L.
Author_Institution
Florida Univ., Gainesville, FL
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
93
Lastpage
94
Abstract
In this paper we calibrate our process/physics-based DG MOSFET model (UFDG (Fossum, et. al., 2004)) to contemporary DG FinFETs, and examine carrier mobilities in the undoped UTBs. The calibrated model is also used to give interesting insights on carrier transport in nanoscale DG FinFETs that contradict ITRS projections
Keywords
MOSFET; carrier mobility; semiconductor device models; DG FinFET; ITRS projections; carrier mobilities; carrier transport; Calibration; Density measurement; Dielectric measurements; Doping; FinFETs; MOSFET circuits; Rough surfaces; Scattering; Surface roughness; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284449
Filename
4062897
Link To Document