Title :
Insights on Carrier Mobilities and Transport in Contemporary DG FinFETs
Author :
Chowdhury, M.M. ; Trivedi, V.P. ; Fossum, J.G. ; Mathew, L.
Author_Institution :
Florida Univ., Gainesville, FL
Abstract :
In this paper we calibrate our process/physics-based DG MOSFET model (UFDG (Fossum, et. al., 2004)) to contemporary DG FinFETs, and examine carrier mobilities in the undoped UTBs. The calibrated model is also used to give interesting insights on carrier transport in nanoscale DG FinFETs that contradict ITRS projections
Keywords :
MOSFET; carrier mobility; semiconductor device models; DG FinFET; ITRS projections; carrier mobilities; carrier transport; Calibration; Density measurement; Dielectric measurements; Doping; FinFETs; MOSFET circuits; Rough surfaces; Scattering; Surface roughness; Thermal conductivity;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284449
