Title :
Suppresion of Floating Body Effect in Low Leakage FD-SOI with Fluorine Implantation Technology
Author :
Domae, Yasuhiro ; Miura, Noriyuki ; Okamura, Tomohiro ; Kumar, Anil ; Ida, Jiro
Author_Institution :
Semicond. R&D Div., Oki Electr. Ind. Co., Ltd., Tokyo
Abstract :
In this paper, we report a new method of suppressing the floating body effect (FBE) in low leakage FD-SOI transistor. We applied the fluorine implantation for NFET to supress the floating body effect, keeping low leakage current. The Vt shift of ~300mV is observed and drain induced barrier lowering (DIBL) improves ~100mV/V for L=0.14mum
Keywords :
field effect transistors; fluorine; ion implantation; leakage currents; semiconductor device manufacture; silicon-on-insulator; FD-SOI transistor; NFET; drain induced barrier lowering; floating body effect suppression; fluorine implantation technology; low leakage current; Annealing; Capacitance-voltage characteristics; Conference proceedings; Degradation; Dielectric films; Fabrication; High K dielectric materials; High-K gate dielectrics; Leakage current; Research and development;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284451
