Title :
The analysis of the amplification and efficiency in polytron and diode with medium transit angles and decelerating static field
Author_Institution :
State Inst. of Electron. & Math., Acad. of Sci., Moscow, Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
This paper presents the analysis of nonlinear phenomena and ultimate characteristics of amplification and generation in microwave vacuum microelectronic structures. The effect of space charge and static field homogeneity on the ultimate values of efficiency and gain has been considered. A numerical simulation of electron motion under the effects of external static electric field, RF field of the gate-anode line, and static and high-frequency space charge fields has been carried out. A one-dimensional model taking the overtake and return of electrons into account has been used. The obtained results of a negative conductance calculation make it possible to calculate the amplification and efficiency and to define the conditions for generating oscillations for different values of the gate-anode line.
Keywords :
diodes; microwave amplifiers; microwave tubes; space charge; triodes; vacuum microelectronics; RF field; amplification; decelerating static field; diode; efficiency; electron motion; gate-anode line; high-frequency field; microwave vacuum microelectronic structures; negative conductance; nonlinear phenomena; numerical simulation; one-dimensional model; oscillation; polytron; space charge; transit angle; Character generation; Diodes; Electron beams; Microstructure; Millimeter wave circuits; Numerical simulation; Poisson equations; Power supplies; Radio frequency; Space charge;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487083
