The analysis of the amplification and efficiency in polytron and diode with medium transit angles and decelerating static field

Author

Solntsev, V.A.

Author_Institution

State Inst. of Electron. & Math., Acad. of Sci., Moscow, Russia

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

434

Lastpage

437

Abstract

This paper presents the analysis of nonlinear phenomena and ultimate characteristics of amplification and generation in microwave vacuum microelectronic structures. The effect of space charge and static field homogeneity on the ultimate values of efficiency and gain has been considered. A numerical simulation of electron motion under the effects of external static electric field, RF field of the gate-anode line, and static and high-frequency space charge fields has been carried out. A one-dimensional model taking the overtake and return of electrons into account has been used. The obtained results of a negative conductance calculation make it possible to calculate the amplification and efficiency and to define the conditions for generating oscillations for different values of the gate-anode line.

Keywords

diodes; microwave amplifiers; microwave tubes; space charge; triodes; vacuum microelectronics; RF field; amplification; decelerating static field; diode; efficiency; electron motion; gate-anode line; high-frequency field; microwave vacuum microelectronic structures; negative conductance; nonlinear phenomena; numerical simulation; one-dimensional model; oscillation; polytron; space charge; transit angle; Character generation; Diodes; Electron beams; Microstructure; Millimeter wave circuits; Numerical simulation; Poisson equations; Power supplies; Radio frequency; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487083

Filename

487083