DocumentCode
3252860
Title
A study of autocorrelation function of 1/f current fluctuations in vacuum microelectronic devices
Author
Amirkhanov, R.N. ; Ghots, S.S. ; Bakhtizin, R.Z.
Author_Institution
Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
438
Lastpage
442
Abstract
An analysis has been done of the autocorrelation function properties for processes with power spectral density of fluctuations S(f)/spl sim/1/f/sup /spl gamma// in a limited frequency range. A calculation technique is proposed to determine the spectral density function index /spl gamma/, the said technique using the autocorrelation function. The results of /spl gamma/ calculations agree well with the data of experimental measurements of low-frequency current fluctuations of the p-type Si field emitter.
Keywords
1/f noise; correlation methods; current fluctuations; vacuum microelectronics; 1/f current fluctuations; Si; autocorrelation function; p-type Si field emitter; power spectral density function index; vacuum microelectronic devices; Autocorrelation; Current measurement; Density functional theory; Fluctuations; Frequency measurement; Microelectronics; Monitoring; Noise measurement; Noise shaping; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487084
Filename
487084
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