Title :
A study of autocorrelation function of 1/f current fluctuations in vacuum microelectronic devices
Author :
Amirkhanov, R.N. ; Ghots, S.S. ; Bakhtizin, R.Z.
Author_Institution :
Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
An analysis has been done of the autocorrelation function properties for processes with power spectral density of fluctuations S(f)/spl sim/1/f/sup /spl gamma// in a limited frequency range. A calculation technique is proposed to determine the spectral density function index /spl gamma/, the said technique using the autocorrelation function. The results of /spl gamma/ calculations agree well with the data of experimental measurements of low-frequency current fluctuations of the p-type Si field emitter.
Keywords :
1/f noise; correlation methods; current fluctuations; vacuum microelectronics; 1/f current fluctuations; Si; autocorrelation function; p-type Si field emitter; power spectral density function index; vacuum microelectronic devices; Autocorrelation; Current measurement; Density functional theory; Fluctuations; Frequency measurement; Microelectronics; Monitoring; Noise measurement; Noise shaping; Shape;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487084
