DocumentCode :
3252862
Title :
Post layout simulation of RF CMOS integrated circuits with passive components
Author :
Moez, Kambiz K. ; Elmasry, Mohamed I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
fYear :
2005
fDate :
7-10 Aug. 2005
Firstpage :
762
Abstract :
This paper presents a post-layout simulation methodology to verify the functionality of RF CMOS circuits before the final tape-out. The passive area of the chip, including all on-chip inductors, capacitors, and resistors, is modeled using 3D EM simulators. This method improves the accuracy of simulation results by bringing into account the effect of coupling of the passive components. Two passive test structures are examined to evaluate the improvement in the simulation results´ accuracy compared with those of the individual modeling of RF passive components
Keywords :
CMOS integrated circuits; S-parameters; integrated circuit layout; integrated circuit testing; radiofrequency integrated circuits; 3D EM simulators; RF CMOS integrated circuits; S-parameters; post-layout simulation; CMOS integrated circuits; CMOS technology; Chip scale packaging; Circuit simulation; Coupling circuits; Integrated circuit technology; Libraries; Radio frequency; Scattering parameters; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location :
Covington, KY
Print_ISBN :
0-7803-9197-7
Type :
conf
DOI :
10.1109/MWSCAS.2005.1594212
Filename :
1594212
Link To Document :
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