• DocumentCode
    3252862
  • Title

    Post layout simulation of RF CMOS integrated circuits with passive components

  • Author

    Moez, Kambiz K. ; Elmasry, Mohamed I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
  • fYear
    2005
  • fDate
    7-10 Aug. 2005
  • Firstpage
    762
  • Abstract
    This paper presents a post-layout simulation methodology to verify the functionality of RF CMOS circuits before the final tape-out. The passive area of the chip, including all on-chip inductors, capacitors, and resistors, is modeled using 3D EM simulators. This method improves the accuracy of simulation results by bringing into account the effect of coupling of the passive components. Two passive test structures are examined to evaluate the improvement in the simulation results´ accuracy compared with those of the individual modeling of RF passive components
  • Keywords
    CMOS integrated circuits; S-parameters; integrated circuit layout; integrated circuit testing; radiofrequency integrated circuits; 3D EM simulators; RF CMOS integrated circuits; S-parameters; post-layout simulation; CMOS integrated circuits; CMOS technology; Chip scale packaging; Circuit simulation; Coupling circuits; Integrated circuit technology; Libraries; Radio frequency; Scattering parameters; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. 48th Midwest Symposium on
  • Conference_Location
    Covington, KY
  • Print_ISBN
    0-7803-9197-7
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2005.1594212
  • Filename
    1594212