Title :
A dynamic self heating model for power SOI Lateral Insulated Gate Bipolar Transistors
Author :
Gamage, Sahan ; Pathirana, V. ; Udrea, F.
Author_Institution :
Cambridge Univ.
Abstract :
In this paper, for the first time we present a fully coupled electro-thermal model for a lateral insulated gate bipolar transistor (LGBT) structure based on a novel concept recently reported in [Udrea, et al, 2004]. The model relies on a systematic study of both isothermal and self heating behaviour of the device under both steady state and dynamic conditions. The model is implemented in the Spice circuit simulator and validated against extensive numerical simulations and experimental data. As far as we are aware this is the first LIGBT model that is validate under extensive long-term dynamic switching conditions
Keywords :
SPICE; bipolar transistors; power transistors; semiconductor device models; silicon-on-insulator; LGBT; Spice circuit simulator; dynamic self heating model; dynamic switching; electro thermal model; lateral insulated gate bipolar transistors; power SOI; Biomembranes; Circuits; Heating; Insulated gate bipolar transistors; Leg; Numerical simulation; Silicon on insulator technology; Steady-state; Temperature distribution; Thermal conductivity;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284452
