A dynamic self heating model for power SOI Lateral Insulated Gate Bipolar Transistors

Author

Gamage, Sahan ; Pathirana, V. ; Udrea, F.

Author_Institution

Cambridge Univ.

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

99

Lastpage

100

Abstract

In this paper, for the first time we present a fully coupled electro-thermal model for a lateral insulated gate bipolar transistor (LGBT) structure based on a novel concept recently reported in [Udrea, et al, 2004]. The model relies on a systematic study of both isothermal and self heating behaviour of the device under both steady state and dynamic conditions. The model is implemented in the Spice circuit simulator and validated against extensive numerical simulations and experimental data. As far as we are aware this is the first LIGBT model that is validate under extensive long-term dynamic switching conditions

Keywords

SPICE; bipolar transistors; power transistors; semiconductor device models; silicon-on-insulator; LGBT; Spice circuit simulator; dynamic self heating model; dynamic switching; electro thermal model; lateral insulated gate bipolar transistors; power SOI; Biomembranes; Circuits; Heating; Insulated gate bipolar transistors; Leg; Numerical simulation; Silicon on insulator technology; Steady-state; Temperature distribution; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284452

Filename

4062900