DocumentCode

3252904

Title

SOI Memories

fYear

2006

fDate

Oct. 2006

Firstpage

102

Lastpage

102

Keywords

FinFETs; Laboratories; Random access memory; Read-write memory; Silicon; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY, USA

ISSN

1078-621X

Print_ISBN

1-4244-0290-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284454

Filename

4062902