Title :
Titanium nitride barrier formation and junction leakage characterization
Author :
Hill, J. ; Gonzales, S. ; Keating, R. ; Gregory, R.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Rapid thermal processing (RTP) of Titanium in an NH/sub 3/ ambient results in the formation of a bilayer TiN/sub x//TiSi/sub y/ diffusion barrier to aluminum spiking and junction leakage. Auger electron spectroscopy and Rutherford backscattering spectrometry were used to characterize the bilayer film properties as a function of starting titanium thickness, RTP temperature, metal deposition degas temperature and substrate doping. It has been demonstrated that barrier layers with incompletely reacted Ti have reduced performance; since unreacted Ti initiates the Al-Ti intermetallic formation, which leads to barrier failure. The optimization of the barrier parameters are discussed, with process guidelines for effective barrier formation.
Keywords :
Auger effect; Rutherford backscattering; diffusion barriers; leakage currents; metallisation; nitridation; rapid thermal processing; titanium compounds; Al spiking; Al-Ti intermetallic formation; Auger electron spectroscopy; NH/sub 3/; NH/sub 3/ ambient; RTP temperature; Rutherford backscattering spectrometry; Si; Ti-Si; TiN-TiSi; barrier formation; barrier parameters optimisation; bilayer TiN/sub x//TiSi/sub y/ diffusion barrier; bilayer film properties; junction leakage characterization; metal deposition degas temperature; rapid thermal processing; starting Ti thickness; substrate doping; Aluminum; Backscatter; Doping; Electrons; Rapid thermal processing; Spectroscopy; Substrates; Temperature; Tin; Titanium;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487087