Self-compensated a-Si:H detector with current-mode readout circuit for digital X-ray fluoroscopy

Author

Safavian, N. ; Chaji, G.R. ; Ashtiani, S.J. ; Nathan, A. ; Rowlands, J.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

fYear

2005

fDate

7-10 Aug. 2005

Firstpage

774

Abstract

An innovative active pixel sensor (APS) suitable for real time X-ray imaging (fluoroscopy) using amorphous silicon (a-Si:H) thin film transistors (TFTs) and a transimpedance column amplifier for pixel signal readout are presented. Simulation results show that this new APS circuit can successfully compensate for variations in a-Si TFT characteristics under prolonged gate voltage stress. The readout is fast enough to fulfil the timing requirements of real-time fluoroscopy

Keywords

X-ray imaging; amorphous semiconductors; current-mode circuits; diagnostic radiography; silicon; thin film transistors; APS circuit; Si:H; active pixel sensor; amorphous silicon TFT; current-mode readout circuit; digital X-ray fluoroscopy; gate voltage stress; real time X-ray imaging; self-compensated a-Si:H detector; thin film transistor; transimpedance column amplifier; Amorphous silicon; Circuits; Image sensors; Pixel; Sensor phenomena and characterization; Thin film sensors; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. 48th Midwest Symposium on

Conference_Location

Covington, KY

Print_ISBN

0-7803-9197-7

Type

conf

DOI

10.1109/MWSCAS.2005.1594215

Filename

1594215