• DocumentCode
    3252961
  • Title

    A New Mechanism of Heavy Ion Induced Upset in SOI SRAMs

  • Author

    Liu, H.Y. ; Liu, S.T. ; Hughes, H.L.

  • Author_Institution
    Honeywell Defense & Space Electron. Syst., Plymouth, MN
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    SRIM simulations have shown that Si recoils are created when heavy ions pass through the Si layer. The estimated heavy ion upset cross section based on a "double-hit" due to such Si recoils is in agreement with test results for a 150nm SOI SRAM test chip
  • Keywords
    SRAM chips; circuit simulation; integrated circuit testing; silicon-on-insulator; 150 nm; SOI SRAM; SRIM simulations; Si recoils; heavy ion induced upset; Bismuth; CMOS technology; Delay; Equations; Inverters; Radiation hardening; Random access memory; Silicon; Switches; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284457
  • Filename
    4062905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252961