Title :
A New Mechanism of Heavy Ion Induced Upset in SOI SRAMs
Author :
Liu, H.Y. ; Liu, S.T. ; Hughes, H.L.
Author_Institution :
Honeywell Defense & Space Electron. Syst., Plymouth, MN
Abstract :
SRIM simulations have shown that Si recoils are created when heavy ions pass through the Si layer. The estimated heavy ion upset cross section based on a "double-hit" due to such Si recoils is in agreement with test results for a 150nm SOI SRAM test chip
Keywords :
SRAM chips; circuit simulation; integrated circuit testing; silicon-on-insulator; 150 nm; SOI SRAM; SRIM simulations; Si recoils; heavy ion induced upset; Bismuth; CMOS technology; Delay; Equations; Inverters; Radiation hardening; Random access memory; Silicon; Switches; Testing;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284457
