DocumentCode
3252977
Title
A graded electron affinity field emission electron source
Author
Shaw, J.L. ; Jung, T. ; Gray, H.F.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
463
Lastpage
467
Abstract
We report electron affinity measurements suggesting that Ga/sub 1-x/Al/sub x/N has the characteristics needed to create an improved field emitter. By grading the composition from low to high Al mole fraction within a thin layer at the surface of a field emitter, the uniformity, noise, and emission modulation characteristics may be improved.
Keywords
III-V semiconductors; aluminium compounds; electron affinity; electron field emission; electron sources; gallium compounds; particle sources; vacuum microelectronics; Al mole fraction; Ga/sub 1-x/Al/sub x/N; GaAlN; electron affinity measurements; emission modulation characteristics; field emission electron source; graded electron affinity source; noise; uniformity; Cathodes; Current density; Electrodes; Electron emission; Electron sources; Elementary particle vacuum; Semiconductor device noise; Transconductance; Tunneling; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487090
Filename
487090
Link To Document