Title :
Novel Capacitor-Less 1T-DRAM Using MSD Effect
Author :
Bawedin, M. ; Cristoloveanu, S. ; Flandre, D.
Author_Institution :
IMEP, INPG-Minatec, Grenoble
Abstract :
In this paper, we propose a different single-transistor capacitor-less DRAM which is operated at low drain voltage and enables low-power applications. The basic mechanism is the meta-stable dip (MSD) effect recently discovered (Bawedin et al., 2004, 2005). MSD gives rise to a hysteresis in ID(VG) curves and a dip in transconductance gm. We demonstrate by systematic measurements and simulations that MSDRAMs with long retention time can be achieved
Keywords :
DRAM chips; low-power electronics; transistors; MSD effect; capacitor-less 1T-DRAM; meta-stable dip; single-transistor capacitor-less DRAM; Capacitors; Conference proceedings; Hysteresis; Impact ionization; Low voltage; MOSFETs; Random access memory; Threshold voltage; Time measurement; Transconductance;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284458
