Vacuum emission of hot electrons from GaAs

Author

Fitting, H.-J. ; Hingst, T. ; Schreiber, E. ; Geib, E.

Author_Institution

Fachbereich Phys., Rostock Univ., Germany

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

468

Lastpage

472

Abstract

Intrinsic GaAs layers up to 3 /spl mu/m on highly doped n/sup ++/-substrate were covered with very thin Au-layers (10 nm) in order to manufacture planar field emission cathodes. At a tenfold Gunn-field of about 50 kV/cm we observe the beginning of hot and ballistic electron emission into vacuum. The energy analysis of them shows energy distributions over several eV exceeding for thick samples even 10 eV. We give a description of that high energy transport by means of Monte-Carlo calculations including acoustic and optical phonon interaction of electrons, intervalley scattering and impact ionization of valence band electrons. In a similar way, by means of vacuum emission experiments, EBIC and MC calculations we have evidenced high field transport in ZnS and SiO/sub 2/, too.

Keywords

III-V semiconductors; Monte Carlo methods; cathodes; electron field emission; electron-phonon interactions; gallium arsenide; hot carriers; impact ionisation; many-valley semiconductors; vacuum microelectronics; EBIC; GaAs; Gunn field; Monte-Carlo calculations; SiO/sub 2/; ZnS; acoustic phonons; ballistic electrons; high field transport; hot electrons; impact ionization; intervalley scattering; optical phonons; planar field emission cathodes; vacuum emission; valence band electrons; Acoustic emission; Acoustic scattering; Cathodes; Electron emission; Electron optics; Gallium arsenide; Manufacturing; Optical scattering; Phonons; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487091

Filename

487091