GaN solid state electron emitter

Summary form only given. Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. The devices include microwave vacuum transistors and tubes, cathodoluminescent flat panel displays, pressure sensors, high temperature and radiation hardened electron devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) low-voltage operation (5-20 volts), (ii) high current density (5-10 A/cm/sup 2/), (iii) room temperature operation and (iv) stable and durable operation. We describe a low voltage, room temperature electron emitter that is based on the AlGaN UV opto-electronic cathode. It consists of an ultra-violet light emitting diode (UV-LED) in direct contact with a photoemitter.