DocumentCode :
3253110
Title :
Investigation of electron tunnelling emitter
Author :
Qi-Lue Chen ; Yi-Man Wang ; Xing-Hui Li ; Jin-Jun Feng
Author_Institution :
Beijing Vacuum Electron. Res. Inst., China
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
488
Lastpage :
490
Abstract :
As one of the potential emitters applied in the vacuum microelectronics devices, in addition to the tip field emitter, electron tunnelling emitters have the advantages of being relatively easy to fabricate and capable of drawing high emission current, and having high resistance to a poor vacuum environment. The development work on MIS electron tunnelling emission arrays is involved in the fabrication of high packing density arrays and high quality electron emission cells. The article describes a Metal-Insulator-Semiconductor electron tunnelling emission array.
Keywords :
MIS devices; electron field emission; tunnelling; vacuum microelectronics; MIS arrays; electron tunnelling emitter; emission current; packing density; vacuum environment; vacuum microelectronics; Diodes; Electron emission; Etching; Fabrication; Gold; Insulation; Microelectronics; Silicon; Substrates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487096
Filename :
487096
Link To Document :
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