State of the art 200 GHz passive components and circuits integrated in advanced thin SOI CMOS technology on High Resistivity substrate

Author

Gianesello, Frederic ; Gloria, D. ; Raynaud, C. ; Montusclat, S. ; Boret, S. ; Clement, C. ; Benech, Ph. ; Fournier, J.M. ; Dambrine, G.

Author_Institution

STMicroelectron., Crolles

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

121

Lastpage

122

Abstract

As the high-frequency capabilities of CMOS improve through scaling (Dambrine et al., 2005), increasing efforts have been carried out during the past years to evaluate the potential of CMOS technologies to address millimeter wave (MMW) applications. The 7 GHz unlicensed bandwidth around 60 GHz and 77 GHz vehicular radar one have focused many attention. In addition this paper demonstrates for the first time that CMOS technologies are able to address higher frequencies applications up to G band (140-220 GHz)

Keywords

CMOS integrated circuits; millimetre wave circuits; passive networks; 140 to 220 GHz; 200 GHz; 60 GHz; 7 GHz; 77 GHz; high resistivity substrate; millimeter wave applications; passive components; thin SOI CMOS technology; vehicular radar; CMOS technology; Conductivity; Coplanar waveguides; Integrated circuit technology; Loss measurement; Millimeter wave measurements; Millimeter wave technology; Performance evaluation; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284465

Filename

4062913