DocumentCode :
3253113
Title :
State of the art 200 GHz passive components and circuits integrated in advanced thin SOI CMOS technology on High Resistivity substrate
Author :
Gianesello, Frederic ; Gloria, D. ; Raynaud, C. ; Montusclat, S. ; Boret, S. ; Clement, C. ; Benech, Ph. ; Fournier, J.M. ; Dambrine, G.
Author_Institution :
STMicroelectron., Crolles
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
121
Lastpage :
122
Abstract :
As the high-frequency capabilities of CMOS improve through scaling (Dambrine et al., 2005), increasing efforts have been carried out during the past years to evaluate the potential of CMOS technologies to address millimeter wave (MMW) applications. The 7 GHz unlicensed bandwidth around 60 GHz and 77 GHz vehicular radar one have focused many attention. In addition this paper demonstrates for the first time that CMOS technologies are able to address higher frequencies applications up to G band (140-220 GHz)
Keywords :
CMOS integrated circuits; millimetre wave circuits; passive networks; 140 to 220 GHz; 200 GHz; 60 GHz; 7 GHz; 77 GHz; high resistivity substrate; millimeter wave applications; passive components; thin SOI CMOS technology; vehicular radar; CMOS technology; Conductivity; Coplanar waveguides; Integrated circuit technology; Loss measurement; Millimeter wave measurements; Millimeter wave technology; Performance evaluation; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284465
Filename :
4062913
Link To Document :
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