Title :
Cone-shaped Metal-Insulator-Semiconductor cathode for vacuum microelectronics
Author :
Ishikawa, J. ; Inoue, K. ; Sadakane, S. ; Gotoh, Y. ; Tsuji, H.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
July 30 1995-Aug. 3 1995
Abstract :
The structure and operating characteristics of a cone-shaped MIS cathode without the outside electrodes were reported. It was confirmed that the emission efficiency reached 8% in spite of the emission instability. Fabrication of a cone-shaped MIS cathode with outside electrode is now proceeding allowing for further improvement of the cathode.
Keywords :
MIS devices; cathodes; vacuum microelectronics; 8 percent; cone-shaped MIS cathode; emission efficiency; emission instability; operating characteristics; outside electrode; vacuum microelectronics; Cathodes; Electrodes; Electron emission; Etching; Fabrication; Metal-insulator structures; Microelectronics; Substrates; Threshold voltage; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487097
