Title :
Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier
Author :
Riemer, P.J. ; Prairie, J.F. ; Buhrow, B.R. ; Chen, C.L. ; Keast, C.L. ; Wyatt, P.W. ; Randall, B.A. ; Gilbert, B.K. ; Daniel, E.S.
Author_Institution :
Mayo Clinic, Rochester, NY
Abstract :
We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maximum gain the LNA exhibits 7.3 dB gain at 35.8 GHz
Keywords :
CMOS analogue integrated circuits; coplanar waveguide components; low noise amplifiers; millimetre wave amplifiers; silicon-on-insulator; 180 nm; 27.5 mW; 35 GHz; 35.8 GHz; 37 GHz; 6.5 dB; 6.7 dB; 7.3 dB; Ka band; MIT-Lincoln Laboratory; coplanar waveguide; float zone substrate; low noise amplifier; silicon-on-insulator CMOS technology; CMOS technology; Conference proceedings; Coplanar waveguides; Fabrication; Gain; Laboratories; Low-noise amplifiers; MMICs; Noise figure; Power transmission lines;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284467
