DocumentCode
3253168
Title
A MOS high Q active inductor - principle and fundamental characteristics
Author
Adachi, Takehiko ; Izumiya, Shoji
Author_Institution
Divison of Electr. & Comput. Eng., Yokohama Nat. Univ.
fYear
2005
fDate
7-10 Aug. 2005
Firstpage
833
Abstract
In this paper, we have proposed a new active inductor circuit. This inductor is composed of an inductance generating part and a negative resistance generating part. The inductance generating part is made by an inverting amplifier, a common-source amplifier with capacitor load and a voltage-current converter. The negative resistance generating part is made by a common-source amplifier and a voltage-current converter. The performance of the proposed active inductor has been evaluated by simulation. Inductance up to 10 Henry and Q factor above 1000 have been obtained
Keywords
MOS integrated circuits; MOSFET; Q-factor; amplifiers; convertors; inductance; inductors; MOS inductor; Q factor; active inductor circuit; capacitor load; common-source amplifier; inductance; inverting amplifier; negative resistance generator; voltage-current converter; Active inductors; Capacitors; Circuit simulation; Equations; FETs; Frequency; Inductance; MOSFET circuits; Q factor; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location
Covington, KY
Print_ISBN
0-7803-9197-7
Type
conf
DOI
10.1109/MWSCAS.2005.1594230
Filename
1594230
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