Title :
Fabrication of metallic tip emitters using the scanning tunneling microscope
Author :
Shkuratov, S.I. ; Dorofeev, I.A. ; Shilimanov, S.N. ; Polushkin, N.I. ; Pesterev, S.V. ; Salaschenko, N.N. ; Ivanov, S.N.
Author_Institution :
Inst. of Electrophys., Acad. of Sci., Ekaterinburg, Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Summary form only given. A technology for fabrication of metallic tip emitters using the scanning tunneling microscope (STM) has been developed. Results are presented of in situ investigations of tip emitters fabricated using STM in a field ion microscope, field electron emission microscope and field electron emission spectrometer. The field emission images, field emission current-voltage characteristics and total energy distribution of emitted electrons have been obtained. The tip formation mechanism is discussed. Factors influencing the tip parameters and field emission characteristics are considered: pulsed action modes, material and thickness of multilayer structures.
Keywords :
electron field emission; field ion emission; microscopy; nanotechnology; scanning tunnelling microscopy; current-voltage characteristics; energy distribution; fabrication; field electron emission microscope; field electron emission spectrometer; field ion microscope; images; metallic tip emitters; multilayer structures; pulsed modes; scanning tunneling microscope; Cathodes; Electron emission; Electron microscopy; Fabrication; Nonhomogeneous media; Tunneling; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487102
