Title :
Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics
Author :
Kang, C.Y. ; Choi, R. ; Song, S.C. ; Ju, B.S. ; Hussain, M.M. ; Lee, B.H. ; Yang, J.W. ; Zeitzoff, P. ; Pham, D. ; Xiong, W. ; Tseng, H.-H.
Author_Institution :
SEMATECH, Austin, TX
Abstract :
Effects of TiN thickness on metal/high-k SOI FinFET characteristics were studied. Compared to planar SOI devices, our metal/high-k FinFETs showed improved carrier mobility due to a vertical strain effect. Almost 2times higher field mobility for a (110)/lang110rang nMOSFET was achieved. With increasing TiN thickness, electron and hole mobility improved in long channel devices due to improved interface quality. As channel length decreased, however, thinner TiN showed higher electron mobility but lower hole mobility due to a strain effect. These results suggest that integrating different metal thicknesses in metal gate/high-k CMOS FinFETs is a promising method to maximize device performance
Keywords :
CMOS integrated circuits; MOSFET; atomic layer deposition; electron mobility; high-k dielectric thin films; hole mobility; silicon-on-insulator; stress effects; TiN; channel length; electron mobility; high-k SOI FinFET; hole mobility; interface quality; long channel devices; metal gate thickness; planar SOI devices; vertical strain effect; Capacitive sensors; Electrodes; Electron mobility; FinFETs; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Tensile stress; Tin; Transconductance;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284472
