Title :
Investigation of Optimum Gate Workfunction for CMOS 4-Terminal MuGFETs
Author :
Masahara, M. ; Surdeanu, R. ; Witters, L. ; Doornbos, G. ; Nguyen, V.H. ; Van den bosch, G. ; Vrancken, C. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
Nat. Inst. of AIST, Leuven
Abstract :
The optimum gate WF for the pin-controllable CMOS 4T-MuGFETs has been experimentally investigated for the first time. Based on analysis of experimental data, it was concluded that the optimum gate WF is around 4.27eV (5.20eV) for NMOS (PMOS) 4T-MuGFETs
Keywords :
CMOS integrated circuits; MOSFET; work function; CMOS 4-terminal MuGFET; NMOS; PMOS; optimum gate workfunction; Circuits; Conference proceedings; Degradation; Energy consumption; Fabrication; Hafnium oxide; MOS devices; MOSFETs; Tin; Very large scale integration;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284473
