Comparison of Tri-gate FET Characteristics for Various Hydrogen Annealing Process Conditions

Hydrogen anneal improves the multigate on-off characteristics considerably (Choi, 2003), however, a higher anneal temperature also results in silicon loss from the fin, thereby reducing the effective width of the device, which degrades its total drive current. This, in turn, offsets the improved mobility-driven drive current gain. To retain the tri-gate fin height after hydrogen anneal, a hard mask based process was developed