DocumentCode :
3253303
Title :
Optimal Design of Nanoscale Triple-Gate Devices
Author :
Chiang, Meng-Hsueh ; Lin, Tze-Neng ; Kim, Keunwoo ; Chuang, Ching-Te ; Tretz, Christophe
Author_Institution :
Nat. Ilan Univ.
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
143
Lastpage :
144
Abstract :
The impacts of corner rounding in TG MOSFETs on DIBL and device characteristics were analyzed via 3D numerical simulations. Properly rounded corners of TG device can improve SCEs or increase drive current. Semi-cylindrical gate structure is preferable for heavily-doped devices, while rectangular gate structure appears better for lightly-doped devices, respectively
Keywords :
MOSFET; nanoelectronics; semiconductor doping; 3D numerical simulations; TG MOSFET; heavily-doped devices; lightly-doped devices; nanoscale triple-gate devices; rectangular gate structure; semicylindrical gate structure; CMOS technology; Conference proceedings; Control systems; Doping profiles; Electrons; MOSFET circuits; Nanoscale devices; Optimal control; Silicon; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284476
Filename :
4062924
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3253303
بازگشت