• DocumentCode
    3253318
  • Title

    Comparative analysis of SRAM cells in sub-threshold region in 65nm

  • Author

    Madan, Raghav ; Gupta, Rishabh ; Nirwan, Bhawana Singh ; Grover, Anuj

  • Author_Institution
    ECE, IIIT-Delhi, Delhi, India
  • fYear
    2015
  • fDate
    19-20 March 2015
  • Firstpage
    609
  • Lastpage
    613
  • Abstract
    Continuous technology scaling and the growing trend of low power applications have led to focus on ultra low voltage operating memories. This work presents a report on different configurations of SRAM cells (6T and 10T) to operate in sub-threshold voltage region.
  • Keywords
    SRAM chips; power aware computing; SRAM cells; continuous technology scaling; low power applications; subthreshold voltage region; ultra low voltage operating memories; Computer architecture; MOS devices; Microprocessors; Noise; SRAM cells; Standards; Transistors; Eldo; SRAM; Spice; performance parameters; sub-threshold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Engineering and Applications (ICACEA), 2015 International Conference on Advances in
  • Conference_Location
    Ghaziabad
  • Type

    conf

  • DOI
    10.1109/ICACEA.2015.7164763
  • Filename
    7164763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3253318