Title :
Parameters of the tip arrays covered by low work function layers
Author :
Evtukh, A.A. ; Litovchenko, V.G. ; Marchenko, R.I. ; Klyui, N.I. ; Semenovich, V. ; Nelep, C.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Electron field emission from silicon tip arrays is investigated. Coating of the emitter surface with a suitable material is an attractive means to improve emission properties of tip arrays. The aim of our study is to enhance emission efficiency. To this end, different silicon tip array structures, namely (i) structures with a porous silicon layer on top of the tips, (ii) structures covered by carbon films, (iii) silicon tips implanted with hydrogen, (iv) Cs-enriched Si tips were prepared and investigated. For comparison and characterization purposes different structure parameters defining emission efficiency, namely the emitter work function, the field enhancement factor and the area factor were determined.
Keywords :
cathodes; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; work function; Cs enrichment; Si; Si-C; Si:Cs; Si:H; area factor; carbon film; coatings; electron field emission; field enhancement factor; hydrogen implantation; porous silicon layer; silicon tip arrays; work function; Carbon dioxide; Chemical vapor deposition; Conductive films; Current measurement; Diodes; Optical films; Plasma displays; Semiconductor films; Silicon; Thermal conductivity;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487108
