Title :
Applying SOI Technology on Carbon Nanotube Transistors
Author :
Zhang, Min ; Chan, Philip C.H. ; Chai, Yang ; Tang, Zikang
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.
Abstract :
By combining the advantages of the SOI technology and in situ carbon nanotube growth technology, we have realized the local silicon-gate CNFETs with individual device operation, low parasitic capacitance, high yield fabrication, and better compatibility to the CMOS process. The CNFETs show excellent electrical performance. Further improvement can be obtained on the CNFET performance by scaling and by changing electrode. The configuration proposes a feasible solution for the integration of carbon nanotube to CMOS circuits
Keywords :
CMOS integrated circuits; carbon nanotubes; elemental semiconductors; field effect transistors; silicon; silicon-on-insulator; CMOS circuits; CMOS process; SOI technology; Si; carbon nanotube transistors; high yield fabrication; in situ carbon nanotube growth technology; parasitic capacitance; silicon-gate CNFET; CMOS technology; Carbon nanotubes; Contact resistance; Crystallization; Dielectrics; Fabrication; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284479
