Dielectric characterization of CVD diamond thin films

Author

Hernández-Vélez, M. ; Sánchez-Garrido, O. ; Fernández-Gutiérrez, F. ; Sánchez-Olías, J. ; Albella-Martin, J.M.

Author_Institution

Fac. de Fisica, ISPEJV, Havana, Cuba

fYear

1995

fDate

10-13 Jul 1995

Firstpage

433

Lastpage

437

Abstract

The dielectric properties of diamond films deposited by CVD techniques onto p- and n-type silicon substrates have been measured in the frequency range from 0.1 to 10³ KHz, at different temperatures. The interpretation of the data has been made on the basis of the many body theory of Dissado and Hill (1980) for the dielectric relaxation in solids. The parameters n and m calculated from this analysis have been correlated with the structure and content of the carbon phases in the films

Keywords

CVD coatings; diamond; dielectric relaxation; elemental semiconductors; many-body problems; semiconductor thin films; 0.1 to 1E3 kHz; C; CVD diamond thin films; Si; Si substrates; dielectric characterization; dielectric properties; dielectric relaxation; many body theory; structure; Capacitance; Dielectric losses; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; Scanning electron microscopy; Semiconductor films; Silicon; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on

Conference_Location

Leicester

Print_ISBN

0-7803-2040-9

Type

conf

DOI

10.1109/ICSD.1995.523023

Filename

523023