Title :
Dielectric characterization of CVD diamond thin films
Author :
Hernández-Vélez, M. ; Sánchez-Garrido, O. ; Fernández-Gutiérrez, F. ; Sánchez-Olías, J. ; Albella-Martin, J.M.
Author_Institution :
Fac. de Fisica, ISPEJV, Havana, Cuba
Abstract :
The dielectric properties of diamond films deposited by CVD techniques onto p- and n-type silicon substrates have been measured in the frequency range from 0.1 to 103 KHz, at different temperatures. The interpretation of the data has been made on the basis of the many body theory of Dissado and Hill (1980) for the dielectric relaxation in solids. The parameters n and m calculated from this analysis have been correlated with the structure and content of the carbon phases in the films
Keywords :
CVD coatings; diamond; dielectric relaxation; elemental semiconductors; many-body problems; semiconductor thin films; 0.1 to 1E3 kHz; C; CVD diamond thin films; Si; Si substrates; dielectric characterization; dielectric properties; dielectric relaxation; many body theory; structure; Capacitance; Dielectric losses; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; Scanning electron microscopy; Semiconductor films; Silicon; Solids;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
DOI :
10.1109/ICSD.1995.523023
