DocumentCode
3253495
Title
Quantum effects influence on thin silicon film capacitor-less DRAM performance
Author
PUGET, Sophie ; BOSSU, Germain ; Regnier, Arnaud ; Ranica, Rossella ; Villaret, Alexandre ; Masson, Pascal ; Ghibaudo, Gerard ; Mazoyer, Pascale ; Skotnicki, Thomas
Author_Institution
STMicroelectonics, Crolles
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
157
Lastpage
158
Abstract
As DRAM integration follows CMOS interest for thin silicon films, we analyze the impact of quantum effects on capacitor-less DRAM based on floating-body effect. Quantum effects significantly reduce the memory effect when silicon film reaches 10nm but their major impact is for thin and undoped silicon film
Keywords
CMOS integrated circuits; DRAM chips; silicon; thin films; 10 nm; CMOS process; Si; capacitorless DRAM performance; floating-body effect; memory effect; quantum effects; thin silicon film DRAM performance; Charge carrier processes; Conference proceedings; Energy states; FETs; Impact ionization; Random access memory; Semiconductor films; Semiconductor process modeling; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284485
Filename
4062933
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