Title :
Cycle time reduction methods for transient thermal simulations
Author :
Asghari, Tony A. ; Stephens, Dennis
Author_Institution :
Autom. Commun. & Electron. Syst. Group, Motorola, Deer Park, IL, USA
Abstract :
A transient thermal analysis was performed on an electronic module to determine the maximum temperature of a number of transistors´ silicon dies during cyclic electrical loading. The computational-fluid-dynamics (CFD) software - Icepak® - was used to model system-level transient thermal behavior. An initial and lengthy full-CFD transient thermal analysis was performed, until periodic-steady-state was achieved. This analysis uses the finite volume method, solving for mass, momentum, and energy and is based on Navier Stokes and energy equations. A simplified Icepak® model was developed, which uses 1/2 of the full-CFD mesh size, by collapsing the computation domain to the boundaries of the solid-model, and imposing heat-transfer-coefficients, as a piece-wise-linear function of the surface temperature, coincident to the outer surface of this model, and solving only for the energy equation. This simplified heat-transfer-coefficient model (h-model) results in a 10 times reduction in cycle-time compared to the full-CFD. An R-C network system level model of this module was designed using PSpice™ software. Inputs were obtained from the Icepak® full-CFD model, and incorporated into the R-C network, resulting in near instantaneous temperature results. The full-CFD, simplified h-model, and R-C network simulation results were validated by experimental measurements, and were found to be within 15% of the overall temperature rise. This methodology can be used to solve for transient thermal analysis problems with various duty-cycles.
Keywords :
Navier-Stokes equations; RC circuits; computational fluid dynamics; elemental semiconductors; field effect transistors; heat transfer; mesh generation; modules; semiconductor device models; silicon; thermal analysis; thermal management (packaging); CFD software; Icepak® software; Navier Stokes equations; R-C network system level model; Si; computational fluid dynamics software; cycle time reduction; cyclic electrical loading; duty cycles; electronic module; energy equations; finite volume method; h-model; heat transfer coefficients; mesh size; piece wise linear function; silicon transistors dies; solid model boundaries; surface temperature; thermal analysis; transient thermal simulations; Computational fluid dynamics; Computational modeling; Equations; Finite volume methods; Performance analysis; Silicon; Solid modeling; Temperature; Thermal loading; Transient analysis;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
Print_ISBN :
0-7803-8357-5
DOI :
10.1109/ITHERM.2004.1319216