DocumentCode :
3253543
Title :
Effects of Temperature on Metal Gate FinFET Circuit Performance
Author :
Marshall, Andrew ; Xiong, Weize ; Cleavelin, C. Rinn ; Matthews, Ken ; Konblinger, Gerhard ; Pacha, Christian ; von Armin, K. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul
Author_Institution :
Texas Instruments Inc., Dallas, TX
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
163
Lastpage :
164
Abstract :
FinFETs are being investigated as an alternative technology to bulk material for sub 45nm process nodes. Here we demonstrate the advantage of FinFET circuits at high temperature with performance of analog and digital building blocks up to 300degC
Keywords :
MOSFET; current mirrors; network analysis; operational amplifiers; oscillators; 300 C; 45 nm; FinFET; circuit analysis; current mirrors; operational amplifiers; ring oscillators; Circuit optimization; FinFETs; Inverters; MOS devices; Mirrors; Operational amplifiers; Ring oscillators; Temperature distribution; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284488
Filename :
4062936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3253543
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