Title :
Effects of Temperature on Metal Gate FinFET Circuit Performance
Author :
Marshall, Andrew ; Xiong, Weize ; Cleavelin, C. Rinn ; Matthews, Ken ; Konblinger, Gerhard ; Pacha, Christian ; von Armin, K. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul
Author_Institution :
Texas Instruments Inc., Dallas, TX
Abstract :
FinFETs are being investigated as an alternative technology to bulk material for sub 45nm process nodes. Here we demonstrate the advantage of FinFET circuits at high temperature with performance of analog and digital building blocks up to 300degC
Keywords :
MOSFET; current mirrors; network analysis; operational amplifiers; oscillators; 300 C; 45 nm; FinFET; circuit analysis; current mirrors; operational amplifiers; ring oscillators; Circuit optimization; FinFETs; Inverters; MOS devices; Mirrors; Operational amplifiers; Ring oscillators; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284488