DocumentCode :
3253547
Title :
SOI technology for the GHz era
Author :
Shahidi, Ghavam G.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fYear :
2001
fDate :
2001
Firstpage :
11
Lastpage :
14
Abstract :
Silicon on Insulator (SOI) CMOS offers 20-35% performance gain over bulk CMOS. High performance microprocessors using SOI CMOS have been shipping since 1998. As we move to 0.13 μm generation, it will be used by more companies, and spread to lower-end microprocessors and SRAMs. In this paper, after a short history of SOI in IBM, we will describe causes of performance gain on SOI, and its scalability to 0.1 μm generation and beyond. Some of the recent applications of SOI in high-end microprocessors will be described. It is fully expected that as we move to 0.1 μm and beyond, SOI is the technology of choice for applications which require high performance, and/or low power
Keywords :
CMOS digital integrated circuits; SRAM chips; microprocessor chips; silicon-on-insulator; 0.1 micron; SOI CMOS technology; SRAM; microprocessor; CMOS technology; Circuits; History; Microelectronics; Microprocessors; Performance gain; Research and development; Scalability; Silicon on insulator technology; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
0-7803-6412-0
Type :
conf
DOI :
10.1109/VTSA.2001.934469
Filename :
934469
Link To Document :
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