Title :
Ultra shallow junction doping technology for sub-100 nm CMOS
Abstract :
We are greeting the technology “Quantum Leap” encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very high throughput and lower resistance. The technology is applied to fabricate the sub-100 nm CMOS
Keywords :
CMOS integrated circuits; annealing; integrated circuit technology; semiconductor doping; 100 nm; CMOS IC fabrication; annealing; electric resistance; low energy doping technology; throughput; ultra-shallow junction; CMOS process; CMOS technology; Chemical technology; Costs; Doping; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Throughput;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934474
