Title :
Extraction of impurity concentration profiles by the DCIV method
Author :
Wang, Yih ; Sah, Chih-Tang
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
The lineshape of the DCIV (Base Current vs Gate Voltage) characteristics is used to extract the spatial variation of the surface impurity concentration in the drain and source extension regions, the drain and source junction regions, and the basewell channel region. Examples are presented to illustrate nanometer spatial resolution of defect enhanced impurity diffusion, nitride barrier against boron penetration through thin gate oxide, and strain-induced interface traps
Keywords :
MOSFET; diffusion; doping profiles; electron traps; impurity distribution; semiconductor device measurement; DCIV method; MOSFETs; Si; base current vs gate voltage characteristics; basewell channel region; defect enhanced impurity diffusion; extension regions; impurity concentration profiles; junction regions; nitride barrier; spatial variation; strain-induced interface traps; surface impurity concentration; Boron; Charge carrier processes; Electric variables measurement; Electron traps; Length measurement; MOSFETs; Semiconductor impurities; Silicon; Spatial resolution; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934475
