Title :
New insights into breakdown modes and their evolution in ultra-thin gate oxide
Author :
Lin, H.C. ; Lee, D.Y. ; Lee, C.Y. ; Chao, T.S. ; Huang, T.Y. ; Wang, T.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device´s switching behavior are also discussed
Keywords :
MIS devices; dielectric thin films; semiconductor device breakdown; semiconductor device models; switching; 3 nm; MOS devices; breakdown modes; current-voltage characteristics; post-breakdown I-V characteristics; soft-breakdown mode; switching behavior; ultra-thin gate oxide; unified model; Chaos; Current-voltage characteristics; Electric breakdown; Laboratories; MOS capacitors; MOS devices; Predictive models; Statistics; Substrates; Thermal conductivity;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934477
